High-frequency acoustic charge transport in GaAs nanowires.
Identifieur interne : 000166 ( Main/Exploration ); précédent : 000165; suivant : 000167High-frequency acoustic charge transport in GaAs nanowires.
Auteurs : RBID : pubmed:24595075Abstract
The oscillating piezoelectric fields accompanying surface acoustic waves are able to transport charge carriers in semiconductor heterostructures. Here, we demonstrate high-frequency (above 1 GHz) acoustic charge transport in GaAs-based nanowires deposited on a piezoelectric substrate. The short wavelength of the acoustic modulation, smaller than the length of the nanowire, allows the trapping of photo-generated electrons and holes at the spatially separated energy minima and maxima of conduction and valence bands, respectively, and their transport along the nanowire with a well defined acoustic velocity towards indium-doped recombination centers.
DOI: 10.1088/0957-4484/25/13/135204
PubMed: 24595075
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">High-frequency acoustic charge transport in GaAs nanowires.</title><author><name sortKey="B Y Kk Se, S" uniqKey="B Y Kk Se S">S Büyükköse</name><affiliation wicri:level="1"><nlm:affiliation>NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, PO Box 217, 7500 AE Enschede, The Netherlands.</nlm:affiliation><country xml:lang="fr">Pays-Bas</country><wicri:regionArea>NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, PO Box 217, 7500 AE Enschede</wicri:regionArea></affiliation></author><author><name sortKey="Hern Ndez M Nguez, A" uniqKey="Hern Ndez M Nguez A">A Hernández-Mínguez</name></author><author><name sortKey="Vratzov, B" uniqKey="Vratzov B">B Vratzov</name></author><author><name sortKey="Somaschini, C" uniqKey="Somaschini C">C Somaschini</name></author><author><name sortKey="Geelhaar, L" uniqKey="Geelhaar L">L Geelhaar</name></author><author><name sortKey="Riechert, H" uniqKey="Riechert H">H Riechert</name></author><author><name sortKey="Van Der Wiel, W G" uniqKey="Van Der Wiel W">W G van der Wiel</name></author><author><name sortKey="Santos, P V" uniqKey="Santos P">P V Santos</name></author></titleStmt><publicationStmt><date when="2014">2014</date><idno type="doi">10.1088/0957-4484/25/13/135204</idno><idno type="RBID">pubmed:24595075</idno><idno type="pmid">24595075</idno><idno type="wicri:Area/Main/Corpus">000136</idno><idno type="wicri:Area/Main/Curation">000136</idno><idno type="wicri:Area/Main/Exploration">000166</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The oscillating piezoelectric fields accompanying surface acoustic waves are able to transport charge carriers in semiconductor heterostructures. Here, we demonstrate high-frequency (above 1 GHz) acoustic charge transport in GaAs-based nanowires deposited on a piezoelectric substrate. The short wavelength of the acoustic modulation, smaller than the length of the nanowire, allows the trapping of photo-generated electrons and holes at the spatially separated energy minima and maxima of conduction and valence bands, respectively, and their transport along the nanowire with a well defined acoustic velocity towards indium-doped recombination centers.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="In-Process"><PMID Version="1">24595075</PMID><DateCreated><Year>2014</Year><Month>03</Month><Day>06</Day></DateCreated><Article PubModel="Print-Electronic"><Journal><ISSN IssnType="Electronic">1361-6528</ISSN><JournalIssue CitedMedium="Internet"><Volume>25</Volume><Issue>13</Issue><PubDate><Year>2014</Year><Month>Apr</Month><Day>4</Day></PubDate></JournalIssue><Title>Nanotechnology</Title><ISOAbbreviation>Nanotechnology</ISOAbbreviation></Journal><ArticleTitle>High-frequency acoustic charge transport in GaAs nanowires.</ArticleTitle><Pagination><MedlinePgn>135204</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1088/0957-4484/25/13/135204</ELocationID><Abstract><AbstractText>The oscillating piezoelectric fields accompanying surface acoustic waves are able to transport charge carriers in semiconductor heterostructures. Here, we demonstrate high-frequency (above 1 GHz) acoustic charge transport in GaAs-based nanowires deposited on a piezoelectric substrate. The short wavelength of the acoustic modulation, smaller than the length of the nanowire, allows the trapping of photo-generated electrons and holes at the spatially separated energy minima and maxima of conduction and valence bands, respectively, and their transport along the nanowire with a well defined acoustic velocity towards indium-doped recombination centers.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Büyükköse</LastName><ForeName>S</ForeName><Initials>S</Initials><Affiliation>NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, PO Box 217, 7500 AE Enschede, The Netherlands.</Affiliation></Author><Author ValidYN="Y"><LastName>Hernández-Mínguez</LastName><ForeName>A</ForeName><Initials>A</Initials></Author><Author ValidYN="Y"><LastName>Vratzov</LastName><ForeName>B</ForeName><Initials>B</Initials></Author><Author ValidYN="Y"><LastName>Somaschini</LastName><ForeName>C</ForeName><Initials>C</Initials></Author><Author ValidYN="Y"><LastName>Geelhaar</LastName><ForeName>L</ForeName><Initials>L</Initials></Author><Author ValidYN="Y"><LastName>Riechert</LastName><ForeName>H</ForeName><Initials>H</Initials></Author><Author ValidYN="Y"><LastName>van der Wiel</LastName><ForeName>W G</ForeName><Initials>WG</Initials></Author><Author ValidYN="Y"><LastName>Santos</LastName><ForeName>P V</ForeName><Initials>PV</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Journal Article</PublicationType><PublicationType>Research Support, Non-U.S. Gov't</PublicationType></PublicationTypeList><ArticleDate DateType="Electronic"><Year>2014</Year><Month>03</Month><Day>04</Day></ArticleDate></Article><MedlineJournalInfo><Country>England</Country><MedlineTA>Nanotechnology</MedlineTA><NlmUniqueID>101241272</NlmUniqueID><ISSNLinking>0957-4484</ISSNLinking></MedlineJournalInfo><CitationSubset>IM</CitationSubset></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="aheadofprint"><Year>2014</Year><Month>3</Month><Day>04</Day></PubMedPubDate><PubMedPubDate PubStatus="entrez"><Year>2014</Year><Month>3</Month><Day>6</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2014</Year><Month>3</Month><Day>7</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2014</Year><Month>3</Month><Day>7</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="doi">10.1088/0957-4484/25/13/135204</ArticleId><ArticleId IdType="pubmed">24595075</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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